 Products> Kar mai karba> 850nm IR LED Emitter Mai karɓar Biyu Sizeananan Girma

850nm IR LED Emitter Mai karɓar Biyu Sizeananan Girma

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Nau'in Biyan kuɗi: T/T,Paypal,Western Union
Ba da fatawa: FOB,EXW,FCA
Min. Order: 5000 Piece/Pieces
Shigo: Ocean,Land,Air
Port: SHENZHEN

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Additional Information

Packaging: Akwatin kartani

Yawan aiki: 1000000000 pcs/week

Shigo: Ocean,Land,Air

Wurin Bayani: China

Abubuwan Abubuwan Dama: 7000000000 pcs/week

Certificate: GB/T19001-2008/ISO9001:2008

HS Code: 8541401000

Port: SHENZHEN

Nau'in Biyan kuɗi: T/T,Paypal,Western Union

Ba da fatawa: FOB,EXW,FCA

Abubuwan Samfuran

Model No.: 1206PT850D &1206IRC-85L

Alamar: Mafi kyawun LED

Marufi & Isarwa

Sayar da Rukuni:	Piece/Pieces
Nau'in Kunshin:	Akwatin kartani

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Bayanan samfur

- Mai karɓar IR -

1206PT850D & 1206IRC-85L

Akwai leda iri biyu a sama, farin daya shine 850nm infrared LED emitter kuma bakin daya shine mai karbar IR na nau'in gani na 850nm LED wanda shima za'a iya sanya masa suna 850nm photo diode. A cikin da'irar, 850nm LED emmit yana fitar da siginar sannan mai karɓar IR zai karɓa. Yawanci, za a haɗa mai karɓar IR ɗin azaman ruwan tabarau na baƙin don tace ƙarin haskenmu, wanda zai iya tabbatar da cewa kawai zai iya samun siginar da muke buƙata. Ga mai karɓar IR, akwai wasu siffofin don zaɓar, kamar su 3mm zagaye na sama, 5mm saman zagaye, 3528 SMD LED nau'in ect.

1206 smd led

- Size: 2.0*1.25*0.8mm

- Chip Number: 1 chip

- Color: 850nm LED

- Type: Surface mount device

- Chip brand: Epistar

- Polarity Mark

- Different color are available

- Different wavelength are available

- Warranty: 5 Years

- RoHS, REACH, EN62471

- Uniform light output

- Long life-solid state reliability

- Low Power consumption

-Anti UV epoxy resin package

-High temperature resistance

-Sigogi nagirman-

1206 smd ir 850nm size

1206 smd 850nm receiver size

Wadannan shari'ar ta SMD LED suma ana samunsu don IR LED, UV LED, Blue SMD LED, Red SMD LED, Amber LED ect.

- Bayyana Launi -

850nm IR LED 1206SMD

* Kalar kamara ta ɗauki launuka a cikin hoto, don Allah ɗauki ainihin sigar fitar kamar daidaitacce.

- Sigogin lantarki -

Cikakkar Matsakaicin Matsayi A Ta = 25 ℃

Parameter	Symbol	Rating
Power Dissipation	Pd	50mW
Pulse Forward Current	IFP	100mA
Forward Current	IF	30mA
Reverse Voltage	VR	5V
Junction Temperature	Tj	115°C
Operating Tempertature	Topr	-40 - +80°C
Storage Tempertature	Tstg	-40 - +100°C
Soldering Temperature	Tsol	260°C
Electro-Static-Discharge(HBM)	ESD	2000v
Warranty	Time	2Years
Antistatic bag	Piece	3000Back
*Pulse Forward Current Condition:Duty 1% and Pulse Width=10us.
*Soldering Condition:Soldering condition must be completed with 3 seconds at 260°C

Hanyoyin Gano da Wutar Lantarki ( T c = 25 ℃ )

Parameter	Symbol	Min	Typ	Max	Unit	Test Condition
Forward Voltage	VF	1.3		1.6	V	IF=30mA
Pulse Forward Voltage	VF		2.0		V	IFP=100mA
Radiant Intensity	IE	2.3		4.8	mw/sr	IF=30mA
Peak Wavelength	λP	845	850	858	nm	IF=30mA
Total Radiated Power	PO		3.2		mw	IF=30mA
Half Width	Dl		50		nm	IF=30mA
Viewing Half Angle	2q1/2		±70		deg	IF=30mA
Reverse Current	IR			5	uA	VR=5V
Rise Time	Tr		25		ns	IF=30mA
Fall Time	Tf		13		ns	IF=30mA
*Luminous Intensity is measured by ZWL600.
*q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.

1206 smd Mai karɓar

Parameter	Symbol	Min	Typ	Max	Unit	Test Condition
Collector-Emitter Voltage	VCEO			30	V
Emitter-Collector Voltage	VECO			5	V
Collector Dark Current	ICEO			30	nA	VCE=20V Ee=0mw/cm2
Collector Dark Current	ICEO			150	uA	VCE=70V Ee=0mw/cm2
On State Collector Current	IC(on)		0.7	4	mA	Ee=1mw/cm2 Vce=5v
Collector-Emitter Breakdown Voltage	Bvceo	85			V	ICBO=100uA Ee=0mw/cm2
Emitter-Collector Breakdown Voltage	Bvceo	8.2			V	IECO=10uA
Collector-Emitter Saturation Voltage	VCE(sat)			0.3	V	IC=2mA IB=100uA Ee=1mw/cm2
Photocurrent 1	IPCE	300		400	uA	Vce=5V Ee=1mw/cm2 λP=850nm
Photocurrent 2	IPCE	500		600	uA	VCE=5V Ee=1mw/cm2 λP=940nm
Current gain	hFE	200		3000	uA	VCE=5V IC=2mA
Wavelenghth of Peak Sensitivity	λP		850		nm
Range of Spectral Bandwidth	λ0.5	700		1100	nm
Response Time-Rise Time	tR		15		us	Vce=5v Ic=1mA RL=1000Ω
Response Time-Fall Time	tF		15		us	Vce=5v Ic=1mA RL=1000Ω
Half Sensitivity angle	△λ		±10		deg
Collector-base Capacitance	CCB			8	PF	F=1MHz,VCB=3V

- Haɗin Zinariya na Zinariya -

* Domin kiyaye kowane mai tsawon rayuwar LED, kamfanin BestLED yayi amfani da waya mai kyau ta zinare don haɗin kewaya

- shiryawa -

* Mun shirya shi da kayan kwalliya bayan mun sanya shi a matsayin reel

- Aikace-aikace -

- LED mai dangantaka -

- Production -

- Yi amfani da -

SMD LED Use of attention

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 Products> Kar mai karba> 850nm IR LED Emitter Mai karɓar Biyu Sizeananan Girma